Gateway Node (GN)

The HelEOS gateway node converts a fiber based 10G Ethernet SFP+ signal into a coaxial RF signal. Usually a gateway node will be placed at the both ends of a HelEOS point to point connection. There are two versions of the Gateway Node a Near End (NE) and a Far End (FE) version. They differ just in the frequencies the system sends and receive in, as one system sends in the low frequencies and the other must receive in that frequencies and vice versa.

Additional to the functional versions ther is a addition Dual Gateway  option.

The system was designed to operate parallel to existing DOCSIS and DVB-C services in a HFC access network.

HelEOS Gateway Node parallel to a HFC Fiber Node (more info under HelEOS solutions)

This HelEOS Gateway Node product is available in the German BK format and the international used compact node enclosure.

 

Technical Data

 

Ethernet and USB Interfaces:

2 x SFP+ slot (for 10Gbit/s SFP+ Transceiver modules).  Only one of the ports is operational the second one can be used for backup scenarios.

RJ45 100 Mbit/s SUB-D connector or SFP 100 Mbit/s connector (Management)

USB OTG port for local management (e.g. technician)

 

Management Interfaces:

Local Management via RJ45/SFP or USB OTG port

Remote Management to downstream or upstream HelEOS node via in-band RF link

Management protocol: ssh CLI, GUI application TCP/IP or SNMP V2/V3

 

10G RF interface:

Coaxial Connector:  F-Type 75 Ohms

Frequency Division Duplex up to full duplex 10 Gbit/s downstream plus 10Gbit/s upstream

Frequencies: 400 MHz – 4 GHz

Max baud rate 1.6 GHz

Link budget: -54dB at QAM 1024 and -81dB at BPSK

Modulation:

BPSK, QPSK, 16, 31, 64, 128, 256, 512, 1024 QAM with error free adaptive modulation

 

Timing and Delay:

Ethernet frame single hop delay: 10us

System supports Synchronous Ethernet clock transfer

Synchronization PTP 1588V2 transparent clock.

 

Operation properties:

Power supply:

  • 24 V DC, allowed range 21 V – 26 V DC
  • power consumption is 28W, typical 25W, eco mode with lower performance 20W

Relative humidity

  • 10 % to 90 %, non-condensing

Temperature

  • Operating ambient temperature: -25°C to 55°C

Certifications

  • CE certificate
  • ESD protection according to IEC 61000-4-2 level 4:
    • ±8kV contact discharge
    • ±15kV air discharge
  • ESD protection according to IEC 61000-4-4 (EFT) (5/50ns) 20A (I/O), 40A (VDD)
  • ESD Protection according to IEC 61000-4-5 (Lightning) 4A (8/20μs)